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 SFH691AT
Vishay Semiconductors
Optocoupler, Phototransistor Output, SOP-4, AC Input, Mini-Flat Package
Features
* SOP (Small Outline Package) * Isolation Test Voltage, 3750 VRMS (1.0 s) * High Collector-Emitter Breakdown Voltage, VCEO = 70 V * Bidirectional AC Input * Low Saturation Voltage * Fast Switching Times * Temperature Stable * Low Coupling Capacitance * End-Stackable, .100 " (2.54 mm) Spacing * Lead-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
A/C 1
4
C
C/A 2
3E
i179066
e3
Pb
Pb-free
Description
The SFH691AT has a GaAs infrared emitting diode emitter, which is optically coupled to silicon planar phototransistor detector, and is incorporated in a 4 pin 100 mil lead pitch miniflat package. It features a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits.
Agency Approvals
* UL1577, File No. E52744 System Code U * FIMKO
Applications
High density mounting or space sensitive PCBs PLCs Telecommunications
Order Information
Part SFH691AT Remarks CTR 50 - 300 %, SMD-4
For additional information on the available options refer to Option Information. The SFH691AT is available only on tape and reel.
Absolute Maximum Ratings
Tamb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter DC Forward current Surge Forward current Power dissipation tp 10 s Test condition Symbol IF IFSM Pdiss Value 50 2.5 80 Unit mA A mW
Document Number 83719 Rev. 1.6, 26-Oct-04
www.vishay.com 1
SFH691AT
Vishay Semiconductors Output
Parameter Collector-emitter voltage Emitter-collector voltage Collector current tp 1.0 ms Power dissipation Test condition Symbol VCE VEC IC IC Pdiss Value 70 7.0 50 100 150 Unit V V mA mA mW
Coupler
Parameter Isolation test voltage between emitter and detector, (1.0 s) Creepage Clearance Comparative tracking index per DIN IEC 112/VDEO 303, part 1 Isolation resistance VIO = 500 V, Tamb = 25 C VIO = 500 V, Tamb = 100 C Storage temperature range Ambient temperature range Junction temperature Soldering temperature max. 10 s. dip soldering distance to seating plane 1.5 mm RIO RIO Tstg Tamb Tj Tsld Test condition Symbol VISO Value 3750 5.0 5.5 175 1012 1011 - 55 to + 150 - 55 to + 100 100 260 C C C C Unit VRMS mm mm
Electrical Characteristics
Tamb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Forward voltage Capacitance Thermal resistance Test condition IF = 5.0 mA VR = 0 V, f = 1.0 MHz Symbol VF CO Rthja Min Typ. 1.15 29 750 Max 1.4 Unit V pF C/W
Output
Parameter Collector-emitter leakage current Collector-emitter capacitance Thermal resistance Test condition VCE = 20 V VCE = 5.0 V, f = 1.0 MHz Symbol ICEO CCE Rthja 5.0 500 Min Typ. Max 100 Unit nA pF C/W
Coupler
Parameter Collector-emitter saturation voltage Coupling capacitance Test condition IF = 10 mA, IC = 2.0 mA f = 1.0 MHz Symbol VCEsat CC Min Typ. 0.1 0.4 Max 0.3 Unit V pF
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Document Number 83719 Rev. 1.6, 26-Oct-04
SFH691AT
Vishay Semiconductors
Current Transfer Ratio
Parameter Current Transfer Ratio CTR1/CTR2 Test condition IF = 5.0 mA, VCE = 5.0 V CTR1 = IC1/IF1, CTR2 = IC2/IF2 Symbol CTR Min 50 0.3 Typ. 120 Max 300 3.0 Unit %
Switching Characteristics
Parameter Rise time Fall time Turn-on time Turn-off time Test condition IF = 5.0 mA, VCC = 5.0 V, RL = 100 IF = 5.0 mA, VCC = 5.0 V, RL = 100 IF = 5.0 mA, VCC = 5.0 V, RL = 100 IF = 5.0 mA, VCC = 5.0 V, RL = 100 Symbol tr tf ton toff Min Typ. Max 3.0 4.0 5.0 3.0 Unit s s s s
Typical Characteristics (Tamb = 25 C unless otherwise specified)
IF
RL = 100 IC
VCC = 5.0 V
50
iSFH691AT_01
Figure 1. Linear Operation ( without Saturation)
Document Number 83719 Rev. 1.6, 26-Oct-04
www.vishay.com 3
SFH691AT
Vishay Semiconductors Package Dimensions in Inches (mm)
4 3
R .010 (.25) .014 (.36)
0.190 (4.83) 0.170 (4.32)
.100 (2.54) .036 (.91) .200 (5.08) .290 (7.37)
1 2 Pin one I.D. (on chamfer side of package) 0.184 (4.67) 0.164 (4.17) 6 0.020 (0.51) 0.010 (0.25) 0.008 (0.20) 0.004 (0.10)
.045 (1.14)
ISO Method A
0.024 (0.61) 0.034 (0.86) 0.080 (2.03) 0.075 (1.91)
0.220 (5.59) 0.200 (5.08) 40 10
0.018 (0.46) 0.014 (0.36) 0.105 (2.67) 0.095 (2.41)
i178038
LEADS COPLANARITY 0.004 (0.10) Max.
0.025 (0.63) 0.015 (0.38) 0.284 (7.21) 0.264 (6.71)
www.vishay.com 4
Document Number 83719 Rev. 1.6, 26-Oct-04
SFH691AT
Vishay Semiconductors Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83719 Rev. 1.6, 26-Oct-04
www.vishay.com 5
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000 Revision: 08-Apr-05
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